IR develops DirectFET MOSFET for DC/DC converters
01 June 2006
At last month’s PCIM (Power Control in Motion) in Nuremberg, International Rectifier (www.irf.com) launched DirectFET MOSFET chipset for high-current DC/DC converters in advanced telecomms and datacomms systems, notebook, high-end desktop and servers.
The IR6712S control FET and IRF6716M sync FET have been developed using the company’s DirectFET packaging technology and HEXFET MOSFET silicon technology. The DirectFET plastic packaging provides low package inductance. Operation can be up to 25A/phase. RDS (on) for the IRF6716M MOSFET is typically only 1.2m2 at 10VGS and 2 m2 at 4.5VGS. This is claimed to be the lowest on-state resistance for a 25V device, making it suitable for use in synchronous rectifier sockets for high-frequency, high-current DC/DC converters powering high current loads. The MOSFET has a slim 0.7mm profile and the MX pad outline enabling the device to be used to migrate easily from existing low-voltage DirectFET MOSFETS.
The IRF6712S single control MOSFET is designed for high-current applications. It has a low gate charge of 13nC and gate to drain charge of 4.4nC. It also has the low profile of 0.7mm and the SQ pad outline, again allowing migration from existing low-voltage MOSFETs.
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