Thin film resistor networks can be silicon and ceramic
09 May 2008
A choice of substrate is provided for the S Series precision thin film resistor networks from BI Technologies.
The precision resistor networks are constructed using a silicon substrate, while the Model 660 precision thin film networks use a ceramic substrate. Both families feature isolated and bused circuits along with a passivation coating to eliminate moisture concerns.
Ceramic substrates feature superior electrical properties and long-term stability, silicon substrates have more packaging options and a finer line width capability, yielding increased resistance per network,.
Ceramic substrates also display low electrical parasitic losses, low NRE/NRT costs and small minimum order quantities compared to silicon substrates which have a lower cost in high order quantities.
Typical applications for the thin film resistor networks include instrumentation amplifiers, precision voltage dividers, precision analogue circuits, measurement bridge and low noise circuitry, ladder networks and converter applications.
The S Series networks feature a resistance range from 1kohm to 100kohm for the isolated networks and 1kohm to 30kohm for the bused networks. Ratio tolerance is less than ±0.05 per cent with TCR tracking tolerances of less than ±5ppm/°C. Operating temperature ranges from -55°C to +125°C.
The Model 664, 667 and 668 networks feature a resistance range of 1kohm to 100kohm.
Absolute tolerances at 25°C are to ±0.1 per cent with TCR tracking to ±5ppm/°C. Operating temperature ranges from -55°C to +125°C.
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