MOSFETs minimise conduction
01 July 2008
DirectFET MOSFETs from International Rectifier are optimised for synchronous buck converter designs.
The 30V DirectFET MOSFETs are for use in notebook computers, server CPU power, graphics and memory voltage regulator applications.
The devices combine the company’s 30V HEXFET power MOSFET silicon and DirectFET packaging technology for a footprint that is 40 per cent smaller than a standard SO-8 device and a 0.7mm profile.
The MOSFETs achieve low on-state resistance and minimise gate charge (Qg) and gate to drain charge (Qgd), claims the company, with low package inductance to reduce conduction and switching losses. As a result, efficiency and thermal performance are increased over the entire load. Operation can be up to 25A/phase within the small form factor of a single control and single synchronous MOSFET.
The IRF6724M, IRF6725M, IRF6726M and IRF6727M have low RDS on, between 1.9 to 1.2mΩ typical, at 4.5V and are suited to high-current synchronous MOSFETs and have a common MT and MX footprint for migration into applications where increased current levels or improved thermal performance is required.
The IRF6721S, IRF6722S and IRF6722M have low Qg, typically 11nC and low Qgd, typically 3.7 to 4.3nC, for use in control MOSFETs and are available in SQ, ST and MP footprints.
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