Smallest 20V n-channel MOSFET
23 December 2008
New device is for increasingly more compact smart phones.
Vishay Intertechnology has announced what it claims to be the industry’s smallest 20V n-channel power MOSFET plus Schottky diode.
Featuring the 1.6mm x 1.6mm thermally enhanced PowerPAK SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32V at 100mA and a MOSFET with on-resistance ratings specified at gate drives down to 1.5 V.
The SiB800EDK is 36% smaller than devices in 2mm by 2mm packages, and offers a thin 0.75mm profile. The integration of two components into one package not only saves space, but the inclusion of a trench Schottky keeps the forward voltage low, reducing voltage drop in level shift applications.
The SiB800EDK offers low on-resistance values from 0.960Ω at 1.5V VGS to 0.225Ω at 4.5V VGS. The low on-resistance rating at 1.5V allows the MOSFET to be used with signals at low levels. Typical applications for the new device will include level shift switching in I2C interface and boost converters in portable devices such as mobile phones, PDAs, digital cameras, MP3 players, and smart phones.
The SiB800EDK features ESD protection, and is 100% lead-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.
Samples and production quantities of the new SiB800EDK are available now, with lead times of 10 to 12 weeks for larger orders.
Contact Details and Archive...
Related Articles...
Most Viewed Articles...