Highly sensitive CMOS image sensor with BSI
03 November 2009
Toshiba has launched a CMOS image sensor that will bring 14.6 million pixels to digital still cameras.
The sensor, the latest addition to Toshiba’s Dynastron line-up, is also the company’s first to integrate the enhanced sensitivity offered by backside illumination technology (BSI).
BSI brings new levels of responsiveness to CMOS imaging. Lenses are deployed on the rear of the sensor on the silicon substrate, not on the front, where wiring limits light absorption. This positioning boosts light sensitivity and absorption by 40% compared to existing Toshiba products, and allows formation of finer image pixels.
Toshiba has made full use of the advantages of BSI to realise image pixels with a pitch of 1.4 microns, and to pack 14.6 million of them into a sensor that meets the high level imaging and processing requirement, and will also bring a new level of image quality to mobile phones. Toshiba will use the new sensor to promote its full-scale entry to the digital camera market, and will continue to develop BSI products as a mainstream technology.
The sensor will be mass produced at Toshiba’s Oita Operations, on industry leading 300mm wafer lines deploying 65nm process technology. Initial production will be at a volume of 500,000 sensors a month.
CMOS image sensors are a focus product of Toshiba’s System LSI business. Until now, their main application has been in mobile phones, where Toshiba could use its high density integration and low power consumption technologies. With the introduction of BSI CMOS sensors, Toshiba will reinforce the sensor business by expanding application to include digital cameras.
Sampling of the new sensor will begin in December and mass production will follow from the third quarter of 2010 (July-September).
Contact Details and Archive...
Related Articles...
Most Viewed Articles...