MOSFET enables low power consumption for LCD TVs
18 January 2011
High-voltage power MOSFETs have approximately 52% lower loss.
Renesas Electronics has just released a new high-voltage N-channel power metal-oxide-semiconductor field-effect-transistor product; the RJK60S5DPK. It has been designed for power supply units that deliver high efficiency. The new power MOSFET provides low power consumption for PC servers, communication base stations, and solar power generation systems.
The RJK60S5DPK power MOSFET is ideal for use in the primary power switching circuit of a power supply unit, which converts alternating current to direct current. It is the first product in Renesas' high-voltage power MOSFET series that employs a high-precision super junction structure to achieve a figure of merit (FOM), a key overall performance index for power MOSFET devices, that is approximately 90% improved from that of the company's existing products. FOM is an index of power MOSFET performance expressed as a numerical value obtained by multiplying the on-resistance (Ron) by the gate-drain charge capacitance (Qgd).
Super junction structure refers to a structural configuration of power MOSFETs. Unlike a conventional planar structure, it enables lowering of the on-resistance without reducing the voltage tolerance of the device. This means the on-resistance per unit of area can be reduced.
Recently, demand has grown for improved efficiency in the power supply circuits to reduce energy consumption, and there is a particularly strong demand for low power consumption though improved power conversion efficiency in high-output switching power supplies for flat-panel TVs, communication base stations, PC servers, and solar power generation systems, and this has spurred demand for power MOSFET products with lower on-resistance. On-resistance (Ron) is the resistance when the power MOSFET is operating. A lower value indicates less conduction loss.
However, there are limits to the improvements that can be achieved using a conventional planar structure. Renesas therefore made use of its accumulated expertise in power device technology to develop a high-precision super junction structure employing a deep-groove formation process. This has made it possible to produce MOSFET devices with a lower on-resistance per unit of area.
The main features of the new RJK60S5DPK power MOSFET are:
• Industry-leading low on-resistance
The new RJK60S5DPK power MOSFET achieves an on-resistance of 150 milliohm (mΩ, standard value at ID = 10 A, VGSS = 10 V), approximately 52% lower than that of existing Renesas Electronics power MOSFET products. This reduces the amount of loss that occurs during power conversion.
• High-speed switching
The MOSFET has a drive capacitance (gate charge Qgd), which affects the switching speed, of only 6 nC (nanocoulomb, standard value at ID = 10 A, VGSS = 10 V), approximately 80% less than that of existing Renesas Electronics products.
This makes it possible to boost power conversion efficiency through the use of high-speed switching. Gate-drain charge capacitance (Qgd) is the electric charge needed to make the power MOSFET operate. A lower value indicates faster switching performance.
The package of the new RJK60S5DPK power MOSFET is equivalent in size to the TO-3P standard package, and the pin assignments conform to the industry standard. This means it can easily be mounted on switching power supply circuit boards that have been evaluated using conventional planar MOSFET devices.
The products in the high-precision super junction structure power MOSFET series can deliver on-resistance per unit of area approximately 80% lower than that of products in the company's existing planar structure series, so if the on-resistance remains the same the chip area can be decreased. Taking advantage of this, Renesas Electronics plans to release a variety of power device products with smaller package sizes, such as products using the TO-220FL (10 mm x 15 mm) package that provide the performance of existing products using the TO-3P (15.6 mm x 19.9 mm) package.
In addition, Renesas has identified flat-panel TVs, communication base stations, and PC servers as products that can benefit from switching power supplies with reduced energy consumption, and the company plans to market a series of new ultra-low on-resistance MOSFET products targeted at such applications. Renesas also intends to expand the scale of its high-voltage power device business by utilising its technology expertise of the new RJK60S5DPK power MOSFET and develop a range of new products tailored for specific applications.
Samples of the RJK60S5DPK power MOSFET are available now, and mass production is scheduled to begin in April 2011 with a combined volume of 500,000 units per month projected by October 2011.
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