Editorial archive;
Power breakthrough in memory initiative (25 January 2010)
Back in the March 2009, we covered the launch of a new initiative for high-bandwidth, low-power memory interface technology for mobile memory systems. Several months down the line and EPD can report that progress is being made.
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Innovating main memory (02 June 2009)
Rambus unveils innovations to advance main memory beyond current DDR3 data rate limits to 3200 Mbps.
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New memory interface technologies from Rambus (20 March 2009)
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